New York, July 4, 2018: The GaN Power Device Market is segmented on the lines of its Device type, vertical and regional. On the basis of device type, the market can be categorised into GaN Power Discrete Devices, GaN Power ICs and GaN Power Modules. On the basis of Vertical, GaN Power Device Market can be segmented into Consumer Electronics, IT & Telecommunication, Automotive, Aerospace & Defence and Others.

    The scope of the report includes a detailed study of GaN Power Device Market with the reasons given for variations in the growth of the industry in certain regions.

    The GaN Power Device Market is expected to exceed more than US$ 1.5 Billion by 2024 at a CAGR of 28.5% in the given forecast period.

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    The major driving factors of GaN Power Device Market are as follows:

    • Huge Revenue Generation from the buyer electronics and Automotive Verticals
    • Wide Bandgap Property of GaN Material Encouraging Innovation
    • Success of GaN in RF-Power electronics
    • Increasing Adoption of GaN RF Power Device in Military, Defence, and aerospace Vertical

    The major restraining factors of GaN Power Device Market are as follows:

    • Competition from sic Devices in High-Voltage Power Applications

    The GaN Power Device Market has been segmented as below:

    By Device Type:

    • GaN Power Modules
    • GaN Power ICs
    • GaN Power Discrete Devices

    By Vertical:

    • Aerospace & Defence
    • IT & Telecommunication
    • Automotive
    • Consumer Electronics
    • Others

    This report provides:

    1) An overview of the global market for GaN Power Device Market and related technologies.
    2) Analyses of global market trends, with data from 2015, estimates for 2016 and 2017, and projections of compound annual growth rates (CAGRs) through 2024.
    3) Identifications of new market opportunities and targeted promotional plans for GaN Power Device Market

    4) Discussion of research and development, and the demand for new products and new applications.
    5) Comprehensive company profiles of major players in the industry.

    Report Scope:

    The report covers detailed competitive outlook including the market share and company profiles of the key participants operating in the global market. Key players profiled in the report include Fujitsu Limited, Transphorm Inc., Cree Incorporated (Wolfspeed), OSRAM Opto Semiconductors GmbH, and Qorvo, Inc., among others. Company profile includes assign such as company summary, financial summary, business strategy and planning, SWOT analysis and current developments.

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    Reasons to Buy this Report:

    1) Obtain the most up to date information available on all GaN Power Device Market

    2) Identify growth segments and opportunities in the industry.

    3) Facilitate decision making on the basis of strong historic and forecast of GaN Power Device Market.

    4) Assess your competitor’s refining portfolio and its evolution.


    Table of Contents

    1. Introduction
    2. Research Methodology
    3. Summary with Insights
    4. Market Overview

    4.1    Introduction

    4.2    Drivers

    4.3    Restraints

    4.4    Industry Trends

    4.5    Porter’s Five Forces Analysis

    1. GaN Power Device Market Analysis, By Device
    2. GaN Power Device Market Analysis, By Vertical
    3. GaN Power Device Market Analysis, By Region
    4. Competitive Overview
    5. Company Profiles

    9.1    Infineon Technologies AG

    9.2    Fujitsu Limited

    9.3    VisIC

    9.4    Toshiba Corporation

    9.5    GaN Systems

    9.6    Panasonic Corporation

    9.7    Taiwan Semiconductor Manufacturing Company

    9.8    On Semiconductors

    9.9    Texas Instruments Inc.



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